Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

ABSTRACT

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device are disclosed in the present application. An example apparatus includes a register configured to store impedance calibration information and further includes programmable termination resistances having a programmable impedance. The example apparatus further includes an impedance calibration circuit configured to perform a calibration operation to determine calibration parameters for setting the programmable impedance of the programmable termination resistances. The impedance calibration circuit is further configured to program the impedance calibration information in the register related to the calibration operation.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of pending U.S. patent applicationSer. No. 17/119,664 filed Dec. 11, 2020, which is a continuation of U.S.patent application Ser. No. 16/505,369 filed Jul. 8, 2019 and issued asU.S. Pat. No. 10,868,519 on Dec. 15, 2020, which is a continuation ofU.S. patent application Ser. No. 15/834,892 filed Dec. 7, 2017 andissued as U.S. Pat. No. 10,348,270 on Jul. 9, 2019, which further claimsthe filing benefit of U.S. Provisional Application No. 62/432,494, filedDec. 9, 2016. The aforementioned applications, and issued patents, areincorporated by reference herein in their entirety and for all purposes.

BACKGROUND

Semiconductor devices such as microcomputers, memories, gate arrays,among others, include input/output pins and an output circuit fortransmitting data to other devices, via a bus, transmission lines formedon a board, and the like. A circuit within the semiconductor device thatis responsible for transmitting data includes, for example, outputbuffers and drivers. For there to be optimum transmission, the impedanceof the transmitting device should be matched to the impedance of thetransmission network and receiving device.

As operational speeds of electronic devices increase, the swing oftransmitted signals decreases. However, as the signal swing width of atransmitted signal decreases, external noise increases. External noisecan affect the reflection characteristics of an output signal if thereis an impedance mismatch at an interface. Impedance mismatches arecaused by external noise or by noise on a power supply voltage,temperature and process variations, among others. If an impedancemismatch arises, the transmission speed of the data decreases, and thedata from a semiconductor device may become distorted. Thus, in a casewhere a semiconductor device receives distorted data, problems can becaused by setup/hold failures or errors in reading received data.

In order to mitigate these adverse scenarios, memory devices may includeprogrammable termination components that may be used to provideadjustable on-die termination and adjustable output driver impedance.The on-die termination may be adjusted. to reduce impedance mismatch,for example, when signals (e.g., command, data, etc.) are provided tothe memory devices. The programmable termination components haveimpedance values that can be adjusted as operating conditions change. Insonic implementations, programmable termination components arecalibrated based on voltage measurements made on a circuit node thatcouples to an external resistance.

In some cases, a limited number of external connections are availablefor coupling to an external resistance. These external connections maybe shared between multiple devices that use the connection forcalibration purposes. As a result, contention for use of the externalconnection may arise when two or more devices attempt to concurrentlyuse the external connection for a calibration operation.

Calibration of the programmable termination components typically occursin response to a memory command, which is provided to the memory device,for example, at power up, memory device reset, changing a frequency setpoint for memory device operation, or whenever initiating a calibrationprocess is desired. Following a time period after the initiation of thecalibration process, another memory command is provided to the memorydevice to apply the parameters determined during the calibration processto set the programmable termination components accordingly. The timeperiod may be set by operating specifications for the memory device.

As the number of memory devices that are coupled to a shared externalresistance for the calibration increases, it may become more difficultto complete the calibration process for all of the memory devices beforethe end of the time period. In a system including multiple devices, thecalibration operations for all of the devices must be completed beforethe specified time period has elapsed in order for calibrationparameters to be applied when the following memory command is provided.Where multiple devices are coupled to a shared external resistance,calibration operations occur one device at a time in order to avoidcontention for using the external resistance. Nonetheless, the totaltime to perform the calibration operations for all of the multipledevices must be less than the time period. As systems include more andmore devices, the total time to complete the calibration operations forall of the devices becomes longer. At some point, it will not bepractical for calibration operations for all of the devices of a systemto be completed within the specified time period.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a semiconductor device according to anembodiment of the disclosure.

FIG. 2A is a block diagram of a semiconductor memory according to anembodiment of the disclosure coupled to memory controllers. FIG. 2B is aflow diagram for calibrating impedances of the semiconductor memory ofFIG. 2A according to an embodiment of the disclosure.

FIG. 3 is a block diagram of an impedance calibration circuit accordingto an embodiment of the disclosure.

FIG. 4 is a flow diagram of an operation according to an embodiment ofthe disclosure for a calibration circuit.

FIG. 5 is a flow diagram of a calibration operation according to anembodiment of the disclosure.

FIG. 6 is a flow diagram of calibration initiation operation forinitiating a calibration operation based on temperature according to anembodiment of the disclosure.

FIG. 7 is a block diagram of an impedance calibration controlleraccording to an embodiment of the disclosure.

FIG. 8 is a block diagram of an impedance calibration engine accordingto an embodiment of the disclosure.

FIG. 9 is a block diagram of programmable termination componentsaccording to an embodiment of the disclosure.

FIG. 10 is a timing diagram of a Voh calibration according to anembodiment of the disclosure.

FIG. 11 is a timing diagram of a Voh calibration according to anembodiment of the disclosure.

DETAILED DESCRIPTION

Certain details are set forth below to provide a sufficientunderstanding of embodiments of the invention. However, it will be clearto one skilled in the art that embodiments of the invention may bepracticed without these particular details. Moreover, the particularembodiments of the present invention described herein are provided byway of example and should not be used to limit the scope of theinvention to these particular embodiments. In other instances,well-known circuits, control signals, timing protocols, and softwareoperations have not been shown in detail in order to avoid unnecessarilyobscuring the invention.

FIG. 1 is a block diagram of a semiconductor device 10 according to anembodiment of the disclosure. The semiconductor device 10 may be a MR5SDRAM integrated into a single semiconductor chip, for example. Thesemiconductor device 10 may be mounted on an external substrate 2 thatis a memory module substrate, a mother board or the like. The externalsubstrate 2 employs an external resistance RZQ that is coupled to acalibration terminal ZQ 27 of the semiconductor device 10. The externalresistance RZQ is a reference impedance used by impedance (ZQ)calibration circuit 38. In the present embodiment, the externalresistance RZQ, which may also be referred to as an external ZQresistor, is coupled to a power supply voltage. In some embodiments, theimpedance of the external resistance RZQ is 240 ohms. In someembodiments of the disclosure the power supply voltage to which theexternal resistance RZQ is coupled may be a power supply voltage Vdd2H,as will be described in more detail below. However, the scope of thedisclosure is not limited to the external resistance RZQ being coupledto the power supply voltage Vdd2H, and the external resistance RZQ maybe coupled to another power supply in another embodiment of thedisclosure. For example, in other embodiments of the disclosure theexternal resistance RZQ may be connected to a power supply voltage VDDQ,or to another power supply voltage.

As shown in FIG. 1 , the semiconductor device 10 includes a memory cellarray 11,

The memory cell array 11 includes a plurality of banks, each bankincluding a plurality of word lines WL, a plurality of bit lines BL, anda plurality of memory cells MC arranged at intersections of theplurality of word lines WL and the plurality of bit lines BL, Theselection of the word line WL is performed by a row decoder 12 and theselection of the bit line BL is performed by a column decoder 13. Senseamplifiers 18 are coupled to corresponding bit lines BL and coupled tolocal I/O line pairs LIOT/B. Local IO line pairs LiOT/B are coupled tomain IO line pairs MIOT/B via transfer gates TG 19 which function asswitches.

Turning to the explanation of a plurality of external terminals includedin the semiconductor device 10, the plurality of external terminalsincludes address terminals 21, command terminals 22, clock terminals 23,data terminals 24, power supply terminals 25 and 26, and the calibrationterminal ZQ 27. An input signal block 41 may include the addressterminals 21, the command terminals 22 and the clock terminals 23. Adata interface block 42 includes the data terminals 24. The dataterminals 24 may be coupled to output buffers for read operations ofmemories. Alternatively, the data terminals 24 may be coupled to inputbuffers for read/write access of the memories that will be laterdescribed. FIG. 1 shows an example of dynamic random access memory(DRAM), however, any device having external terminals for signalinput/output may be included as the external terminals of embodiments ofthe disclosure.

The address terminals 21 are supplied with an address signal ADD and abank address signal BADD. The address signal ADD and the bank addresssignal BADD supplied to the address terminals 21 are transferred via anaddress input circuit 31 to an address decoder 32. The address decoder32 receives the address signal ADD and supplies a decoded row addresssignal XADD to the row decoder 12, and a decoded column address signalYADD to the column decoder 13. The address decoder 32 also receives thebank address signal BADD and supplies the bank address signal BADD tothe row decoder 12 and the column decoder 13.

The command terminals 22 are supplied with a command signal COM. Thecommand signal COM may include one or more separate signals. The commandsignal COM input to the command terminals 21 is input to a commanddecoder 34 via the command input circuit 33. The command decoder 34decodes the command signal COM to generate various internal commandsignals. For example, the internal commands may include a row commandsignal to select a word line and a column command signal, such as a readcommand or a write command, to select a bit line, and a calibrationsignal ZQ_COM provided to the calibration circuit 38.

Accordingly, when a read command is issued and a row address and acolumn address are timely supplied with the read command, read data isread from a memory cell MC in the memory cell array 11 designated bythese row address and column address. The read data DQ is outputexternally from the data terminals 24 via a read/write amplifier 15 andan input/output circuit 17. Similarly, when the write command is issuedand a row address and a column address are timely supplied with thewrite command, and then write data DQ is supplied to the data terminals24, the write data DQ is supplied via the input/output circuit 17 andthe read/write amplifier 15 to the memory cell array 11 and written inthe memory cell MC designated by the row address and the column address.The input/output circuit 17 may include input buffers and outputbuffers, according to one embodiment. The input/output circuit 17 mayinclude programmable termination components 30. The programmabletermination components 30 of the input/output circuit 17 may be set toprovide impedances of the input buffer and output buffer of theinput/output circuit 17. previously described, the impedance of theprogrammable termination components may be used to reduce impedancemismatch.

The clock terminals 23 are supplied with external clock signals CK and/CK, respectively. These external clock signals CK and /CK arecomplementary to each other and are supplied to a clock input circuit35. The clock input circuit 35 receives the external clock signals CKand /CK and generates an internal clock signal ICLK. The internal clocksignal ICLK is supplied to an internal clock generator 36 and thus aphase controlled internal clock signal LCLK is generated based on thereceived internal clock signal ICLK and a clock enable signal CKE fromthe command input circuit 33. Although not limited thereto, a DLLcircuit can be used as the internal dock generator 36. The phasecontrolled internal clock signal LCLK is supplied to the input/outputcircuit 17 and is used as a timing signal for determining an outputtiming of the read data DQ. The internal clock signal ICLK is alsosupplied to a timing generator 37 and thus various internal clocksignals can be generated.

A temperature sensor 44 senses a temperature of the semiconductor device10 and provides a TEMP signal, which is indicative of a temperature ofthe semiconductor device 10. In some embodiments, the TEMP signal may bea digital signal having a value indicative of a temperature of thesemiconductor device. In some embodiments, the TEMP signal may have avoltage level indicative of a temperature of the semiconductor device.For example, a value of the VTEMP signal may increase if the temperatureof the semiconductor device increases.

A mode register 46 is used to define various modes of programmableoperations and configurations of the semiconductor device 10. The moderegister retains the stored information until it is reprogrammed, reset,or the semiconductor device 10 loses power. The mode register 46 isprogrammed via a mode register write command. The mode register 46 mayinclude one or more registers for storing information related to thedifferent operations and configurations. For example, the mode registermay be used to set burst length, burst type, CAS latency, frequency setpoint, enable programmable termination components, as well as others.The mode register 46 may also be programmed with information that can beread to provide status information about the semiconductor device 10.For example, the mode register may be used to provide a ready status,calibration status, as well as other status information. The informationthat is read may be programmed by circuits of the semiconductor device10. The mode register 46 may be read via a mode register read command.Reading the mode register 46 allows information about the status ofoperations and configurations to be provided by the semiconductor device10.

The power supply terminals 25 are supplied with power supply voltagesVDD and VSS. These power supply voltages VDD and VSS are supplied to aninternal power supply circuit 39. The internal power supply circuit 39generates various internal voltages VPP, VOD, VARY, VPERI, Vdd2H and areference voltage ZQVREF. The Vdd2H voltage may be an internal voltageused as an output voltage to drive output signals. The internal voltageVPP is mainly used in the row decoder 12, the internal voltages VOD andVARY are mainly used in the sense amplifiers 18 included in the memorycell array 11, and the internal voltage VPERI is used in many othercircuit blocks. The reference voltage ZQVREF is used by the calibrationcircuit 38. In some embodiments, the ZQVREF is based on the Vdd2Hvoltage.

The power supply terminals 26 are supplied with power supply voltagesVDDQ and VSSQ. These power supply voltages VDDQ and VSSQ are supplied tothe input/output circuit 17. The power supply voltages VDDQ and VSSQ maybe the same voltages as the power supply voltages VDD and VSS that aresupplied to the power supply terminals 25, respectively. However, thededicated power supply voltages VDDQ and VSSQ may be used for theinput/output circuit 17 so that power supply noise generated by theinput/output circuit 17 does not propagate to the other circuit blocks.

The power supply voltage VDDQ may change during operation. For example,the power supply voltage VDDQ may change from a relatively low voltage(e.g., 0.3 volts) to a relatively high voltage (e.g., 0.5 volts), andvice versa. The power supply voltage VDDQ may be changed when afrequency set point of the semiconductor device 10 is changed, Changingfrequency set point for the semiconductor device 10 changes thefrequency of operation, for example, the operating speed of theinput/output circuits 17. Lower frequencies of operation may operatewithout the use of on-die terminations, while higher frequencies ofoperation may require using on-die terminations to mitigate impedancemismatch. Lower voltages may be used for lower frequencies of operationdue to reduced voltage swing from being unterminated, whereas highervoltages are used for higher frequencies of operation, For example, whenswitching from a relatively low frequency set point to a higherfrequency set point the power supply voltage VDDQ may change fromrelatively low voltage to a higher power supply voltage VDDQ.Conversely, when switching from a relatively high frequency set point toa lower frequency set point the power supply voltage VDDQ may changefrom relatively high voltage to a lower power supply voltage VDDQ. Insome examples, external resistance RZQ is connected to the power supplyvoltage VDDQ.

The calibration circuit 38 include circuits to perform calibrationoperations when activated by the calibration signal ZQSOM. Thecalibration operations may be performed with reference to an impedanceof an external resistance RZQ and the reference voltage ZQVREF. Thecalibration circuit 38 is coupled to the calibration terminal ZQ 27. Inembodiments where a plurality of semiconductor devices 10 haverespective calibration terminals ZQ 27 coupled to an external resistanceRZQ, the calibration circuit 38 arbitrates amongst the plurality ofsemiconductor devices 10 for use of the external resistance RZQ duringcalibrations operations. During a calibration operation, the calibrationcircuit 38 calibrate impedances of programmable termination componentsto the external resistance RZQ by determining appropriate calibrationparameters that are used to set the programmable termination componentimpedance. The calibration parameters determined by the calibrationcircuit 38 during the calibration operation may be stored by thecalibration circuit 38. The stored calibration parameters may beretrieved and applied to the programmable termination components. Animpedance code ZQCODE representing calibration parameters is supplied tothe input/output circuit 17 to set the programmable terminationcomponents to the desired impedance for the buffers of the input/outputcircuit 17.

The calibration circuit 38 programs calibration information ZQRDY intothe mode register 46. The calibration information ZQRDY reflects anaspect of the calibration operation. For example, in some embodimentsthe value of the calibration information ZQRDY programmed in the moderegister 46 represents Whether the calibration operation is completed.In some embodiments the value of the calibration information ZQRDYrepresents whether any new calibration parameters have been determinedby a calibration circuit 38. The mode registers 125 may be queried, forexample, by a memory controller, to retrieve the calibration informationreflecting an aspect of the calibration operation, for example,completion of the calibration operations and/or new calibrationparameters have been determined.

Providing the calibration information to be queried allows for a memorycontroller to be informed as to an aspect of the calibration operation.In some embodiments, the calibration information may be used by thememory controller to determine when to issue a command to apply thecalibration parameters, rather than issuing the command at the end of atime period under the assumption that all devices have completedcalibration operations. As previously described, as systems include moreand more devices, completing calibration operations for the multipledevice system within the time period becomes very challenging. Byprogramming calibration information into the mode registers, a memorycontroller can determine when to issue the command to apply thecalibration parameters by periodically reading the mode register ratherthan idling until the calibration operations are completed.

In some embodiments, following completion of the calibration operationfor a power up sequence, the calibration parameters may be applied bythe semiconductor device without relying on any commands from a memorycontroller. For example, the semiconductor device applies thecalibration parameters automatically after determining the calibrationoperation is completed without waiting for a command from the memorycontroller. In this manner, the memory controller does not need to beinvolved with the calibration of impedances during a power up sequence.The memory controller, however, may check the status of the calibrationoperation by checking the calibration information in the mode register.

Programming calibration information into the mode registers also allowsthe total time for the calibration operations to exceed the time periodwithout negatively impacting power up time due to the memory controlleridling until the calibration operations for all of the devices arecompleted. Additionally, in some embodiments, the calibration parametersare applied to set impedances without the need to receive a command todo so. The calibration parameters may be applied automatically aftercompleting the calibration operations. More generally, completion ofcalibration operations for the devices is not rushed, and the memorycontroller may perform other start up related operations during the timefor the calibration operations.

FIG. 2A is a block diagram of a semiconductor memory 200 according to anembodiment of the disclosure. The semiconductor memory 200 may be avolatile memory such as a SRAM or DRAM, or a non-volatile memory such asa FLASH memory or a ferroelectric memory. In one embodiment, the DoubleData Rate (DDR) memory, such as a Low Power Double Data Rate 5 (LPDDR5)memory. In accordance with various embodiments, the semiconductor memory200 may include a plurality of individual semiconductor devices 204 thatmay be arranged on one or more different semiconductor dies. In someembodiments, the semiconductor device 10 of FIG. 1 may be used as theindividual semiconductor devices 204 of the semiconductor memory 200.

The semiconductor memory 200 may include a package that contains andinterconnects the various individual semiconductor devices 204. Thepackage may provide a plurality of external pins that couple to contactpads arranged on the interior of the package, The pins and pads mayprovide electrical connections such as between the semiconductor devices204 and the larger system to Which the semiconductor memory 200 iscoupled. As shown in FIG. 2A, the semiconductor memory 200 may includean internal pad, which may be referred to as the ZQ pad 112. An externalresistance RZQ may couple to the ZQ pad 112.

One or more of the individual semiconductor devices 204 are coupled tothe ZQ pad 112 to share the external resistance RZQ for impedancecalibration. Each of the semiconductor devices 204 may be coupled to theZQ pad 112 at a respective calibration terminal ZQ 27, As previouslydescribed, where several semiconductor devices 204 have respectivecalibration terminals ZQ 27 sharing an external resistance RZQ, thesemiconductor devices 204 need to arbitrate for use of the externalresistance RZQ during calibrations operations and obtain control overthe external resistance RZQ before initiating calibration operations.

The semiconductor memory 200 may be associated with one or more memorycontrollers 240 that are configured to provide data communication to andfrom the semiconductor memory 200. Each memory controller 240 maycommunicate across a separate memory bus 252 that couples the memorycontroller 240 to one or more individual semiconductor devices 204 ofthe semiconductor memory 200. Each memory bus 252 associated with agiven memory controller 240 may include address, data, and control linesthat are connected in common between the various semiconductor devices204 with which the respective memory controller 240 communicates. Eachmemory bus 252 may additionally include individual chip select lines 256that may be selectively asserted to enable one of the semiconductordevices 204 to send or receive data across the common address, data, andcontrol lines. Through the combination of individual chip select lines256 and common address, data, and control lines, a memory bus 252associated with a given memory controller 240 provides separatecommunication pathways between the memory controller and each of thevarious semiconductor devices 204 with which the memory controller 240communicates.

As will be described in more detail below, the calibration circuit 38 isconfigured to arbitrate and perform ZQ calibration operations andmaintain calibration parameters in the background. That is, thecalibration circuit 38 may perform ZQ calibration operations andmaintain calibration parameters without receiving a calibration command,for example, from a memory controller. In this manner, calibrationoperations can be performed and the calibration parameters maintained bythe semiconductor device 10 without waiting for a calibration command.

Calibration operations may be performed as part of a power-on sequencethat occurs when power is first provided to the semiconductor device 10.Calibration operations may also be performed by the calibration circuit38 when there is a change in operating condition for the semiconductordevice 10. For example, calibration operations may be performed by thecalibration circuit 38 based on the operating temperature of thesemiconductor device 10, such as a change in the operating temperaturemay cause calibration operations to be performed, or the operatingtemperature exceeds or falls below a temperature limit. Calibrationoperations may also be performed based on time. For example, thecalibration circuit 38 may perform calibration operations after a timeperiod has elapsed. The calibration circuit 38 may perform calibrationoperations periodically as another example.

The calibration circuit 38 may provide an indication of completingcalibration operations or determining new calibration parameters byupdating information in the mode registers 125. For example, in someembodiments, the calibration circuit 38 updates a bit stored in the moderegisters 125. The mode registers 125 may be queried, for example, by amemory controller, to retrieve the updated bit reflecting the completionof the calibration operations. The calibration circuit 38 mayadditionally or alternatively update information in the mode registers125 to provide indication of updated calibration parameters. Thecalibration parameters may be changed (e.g., updated) following acalibration operation triggered by the calibration circuit 38, such aspreviously discussed.

In operation, with reference to FIG. 2B, a memory controller 240 mayissue a mode register read command at step 260 to a semiconductor device204 to which the memory controller is coupled to read calibrationinformation from the mode register. At step 263, if the read calibrationinformation is set to indicate that the calibration operation iscompleted and/or new calibration parameters have been determined, atstep 265 the memory controller 240 may issue a command to apply thecalibration parameters to set impedances of the programmable terminationcomponents for that semiconductor device. Where calibration parametersare applied without the need to receive a command, the memory controller240 does not issue a specific command, step 265 may be omitted. If thecalibration information is not set to indicate such, the memorycontroller 240 may check the calibration information at a later time, asrepresented by step 270. Until that later time, the memory controller240 may perform other operations, for example, other operations relatedto power up and initialization.

The operation of checking the calibration information of thesemiconductor devices 204 may be repeated by the memory controllers 240until the semiconductor devices 204 are all calibrated. After all of thesemiconductor devices 204 have calibration information indicating thatthe calibration operation is completed, and the calibration parametershave been applied, calibration operations for the semiconductor memory200 is complete.

FIG. 3 is a block diagram of an impedance ZQ calibration circuit 300according to an embodiment of the disclosure. The calibration circuit300 may be used as the ZQ calibration circuit 38 (FIG. 1 ) in someembodiments. The ZQ calibration circuit 300 may perform calibrationoperations without receiving a calibration command, for example, from amemory controller. The calibrations operations occur in the background,and completion or updating with new calibration parameters is indicatedby calibration information programmed in a mode register.

The calibration circuit 300 is coupled to the calibration terminal ZQ27. An external resistance RZQ is coupled between the calibrationterminal ZQ 27 and a power supply. The power supply may provide avoltage, for example, that is equal to the internal voltage Vdd2H. Insome embodiments, the internal voltage Vdd2H is a constant voltage, anddoes not vary based on variations in an externally provided voltage, forexample, the externally provided data output voltage VDDQ or the powersupply voltage VDD. However, as previously described, in someembodiments of the disclosure, the power supply may provide a voltagethat is equal to the VDDQ voltage, or another voltage.

The calibration circuit 300 includes a ZQ arbitration engine 310 coupledto the calibration terminal ZQ 27 and receives a calibration activationsignal ZQCAL. As previously discussed, the calibration circuit 300performs calibration operations when activated by the calibration signalZQ_COM. The ZQ arbitration engine 310 is configured to arbitrate forcontrol over the external resistance RZQ amongst multiple semiconductordevices that are coupled to the same external resistance RZQ. Inresponse to the calibration activation signal ZQCAL, the ZQ arbitrationengine 310 provides a calibration start signal ZQCALSTART to initiatecalibration operations when control over the external resistance RZQ isobtained.

In some embodiments, the ZQ arbitration engine 310 may apply a protocolpriority arbitration scheme with other semiconductor devices coupled toa shared external resistance RZQ. In determining whether othersemiconductor devices are performing calibration operations using theexternal resistance RZQ, the ZQ arbitration engine 310 may monitor avoltage of the calibration terminal ZQ 27 and compare the voltage to anexpected threshold voltage. The arbitration engine 310 may monitor thevoltage of the calibration terminal ZQ 27 over a time intervalassociated with the semiconductor device to avoid contention over use ofthe external resistance RZQ. Each of the semiconductor devices coupledto the external resistance RZQ may have a different time interval.

While examples of arbitration protocols have been described, they arenot intended to limit the disclosure to only these examples arbitrationprotocols. Other arbitration protocols may be used as well withoutdeparting from the scope of the present disclosure.

The ZQ calibration engine 320 is coupled to the arbitration engine 310and the calibration terminal ZQ 27. The ZQ calibration engine 320 isconfigured to perform the calibration operation and provide calibrationparameters for setting impedances of programmable terminationcomponents. The ZQ calibration engine 320 performs calibrationoperations when activated by the calibration start signal ZQCALSTART,The ZQ calibration engine 320 uses a voltage of the calibration terminalZQ 27 for determining the calibration parameters. The calibrationparameters may be stored, and the ZQ calibration engine 320 may applythe calibration parameters to set impedances of the programmabletermination components responsive to the ZQLAT signal. The ZQLAT signalis based on a ZQ Latch command received by the semiconductor device. Thecalibration parameters are provided in the form of an impedance codeZQCODE. The impedance code ZQCODE is provided to the input/outputcircuit 17 and applied to set the impedances of programmable terminationcomponents included in the input/output circuit 17.

The calibration circuit further includes a ZQ calibration controller330. The ZQ calibration controller 330 receives the calibration signalZQ_COM and is coupled to the ZQ arbitration engine 310. The calibrationcontroller 330 provides the calibration activation signal ZQCAL to theZQ arbitration engine 310 to initiate calibration operations whencontrol over the external resistance RZQ is obtained.

The ZQ calibration controller 330 may further receive temperatureinformation provided by the temperature sensor 44. The temperatureinformation may be represented by the TEMP signal. As will be describedin more detail below, the calibration controller 330 may provide acalibration activation signal ZQCAL to initiate calibration operationsbased on the temperature information. For example, in some embodiments,the calibration controller 330 may initiate a calibration operationresponsive to a change in temperature exceeding a temperature range. Inthis manner, accurate calibration parameters may be maintained overchanging operating temperature.

The ZQ calibration controller 330 may initiate calibration operationsbased on time. The ZQ calibration controller 330 may receive a clocksignal, for example, the internal clock signal LCLK provided by theinternal clock generator 36 of FIG. 1 . The ZQ calibration controller330 may use the clock signal to time when a calibration activationsignal ZQCAL is provided to initiate the calibration operations. Forexample, the ZQ calibration controller 330 may provide the calibrationactivation signal ZQCAL to periodically perform the calibrationoperations. A time period may be measured according to the clock signal,and the calibration activation signal ZQCAL provided when the timeperiod elapses. In this manner, accurate calibration parameters may bemaintained over time.

FIG. 4 is a flow diagram 400 of an operation of the calibration circuit300 according to an embodiment of the disclosure. A calibrationoperation is performed at step 410 to determine the calibrationparameters for the programmable termination components 30 of the I/Ocircuit 17. in the event that the calibration parameters are updatedwith new calibration parameters (e.g., to change the settings of theprogrammable termination components 30) at step 420, information isprogrammed in the mode register at step 430 to indicate that thecalibration parameters have been updated (e.g., program “1” in the moderegister). However, in the event that the calibration parameters are notupdated with new calibration parameters (e.g., maintain current settingsof the programmable termination components 30) at step 420, theinformation in the mode register providing notification/indication ofthe calibration operation is maintained at step 440 (e.g., maintain “0”in the mode register)

FIG. 5 is a flow diagram of a calibration operation 500 according to anembodiment of the disclosure. The calibration operation 500 may beperformed by a calibration circuit, for example, the calibration circuit38 of FIG. 1 , the calibration circuit 300 of FIG. 3 , or anothercalibration circuit in accordance with an embodiment of the disclosure.

In some embodiments, the calibration operation 500 may be initiated by acalibration circuit as part of a power up operation. In someembodiments, the calibration operation 500 may be initiated responsiveto a calibration command. A calibration command may be provided, forexample, by a memory controller to a semiconductor device including acalibration circuit. In some embodiments, the calibration operation 500may be initiated by a calibration circuit based on temperature, such astemperature measured by a temperature sensor 44 of FIG. 1 . For example,the calibration circuit may initiate the calibration operation 500 whenthe measured temperature exceeds a temperature limit. In anotherexample, the calibration circuit may initiate the calibration operation500 when a temperature difference between a current temperature and aprevious temperature exceeds a temperature range. In some embodiments,the calibration operation 500 may be initiated by a calibration circuitbased on time. For example, the calibration circuit may initiate thecalibration operation 500 periodically, or after a time period haselapsed. The time period may be measured based on a clock signal.

A calibration circuit may perform step 510 when a plurality ofsemiconductor devices are coupled to the same external resistance RZQ.One semiconductor device may use the external resistance RZQ at a timefor calibration operations. To avoid more than one semiconductor deviceusing the external resistance RZQ at a time, a ZQ arbitration engine ofthe calibration circuit may arbitrate usage of the external resistanceRZQ by the semiconductor device to avoid conflicts with othersemiconductor devices using the external resistance RZQ at the sametime.

At step 520 a decision is made by the calibration circuit whether thesemiconductor device has control over the external resistance RZQ to usefor the calibration operation. The calibration circuit remains at step520 until the semiconductor device has obtained control over theexternal resistance RZQ to perform the calibration operation. When thesemiconductor device has control over the external resistance RZQ, thecalibration circuit performs the calibration operation at step 530. Thesteps 510 and 520 may be excluded from the calibration operation 500 insome embodiments. For example, where concurrent usage of the externalresistance RZQ by multiple semiconductor devices is avoided by someother technique, the steps 510 and 520 may be excluded.

At step 530 the calibration parameters may be determined by thecalibration circuit based on the external resistance RZQ. Thecalibration parameters may be determined by the ZQ calibration engine.In some embodiments, the ZQ calibration engine determines thecalibration parameters by an operation that includes comparing thevoltage at the calibration terminal ZQ 27 to a reference voltage andadjusting programmable termination components until the voltage at thecalibration terminal ZQ is equal to the reference voltage ZQVREF. Thecalibration parameters are then stored by the calibration circuit atstep 540 and an indication of completing the calibration operation isprovided by programming information to a mode register at step 550. Themode register may be queried through a mode register read operation, forexample, by a memory controller. In some embodiments, a calibrationlatch command may be received by the semiconductor device 10 to applyany new calibration parameters. In some embodiments, the new calibrationparameters may be applied without a calibration latch command. Forexample, after a change in the frequency set point any new calibrationparameters may be applied without receiving a calibration latch commandfrom a memory controller.

FIG. 6 is a flow diagram of calibration initiation operation 600 forinitiating a calibration operation based on temperature according to anembodiment of the disclosure, The calibration initiation operation 600may be performed by a calibration circuit, for example, the calibrationcircuit 38 of FIG. 1 , the calibration circuit 300 of FIG. 3 , oranother calibration circuit in accordance with an embodiment of thedisclosure.

At step 610, temperature information representing a current temperaturemay be latched by the calibration circuit. Temperature information maybe provided to the calibration circuit by a temperature sensor, forexample, temperature sensor 44 of FIG. 1 . As previously described, thetemperature sensor senses a temperature of the semiconductor device andprovides temperature information. The temperature information may berepresented by a signal that is indicative of a temperature of thesemiconductor device. For example, in some embodiments the signalrepresents digital data that may be latched by the calibration circuit.In some embodiments a voltage level of the signal may become higher ifthe temperature of the semiconductor device becomes higher, andconversely, may become lower if the temperature of the semiconductordevice becomes lower. The voltage of the signal may be converted into adigital value that may then be latched by the calibration circuit.

At step 620, the current temperature is compared to a previoustemperature by the calibration circuit to determine a change intemperature. When the change in temperature exceeds a temperature range,a calibration operation may be initiated. At step 630 the decision ismade whether the change in temperature exceeds the temperature range. Ifthe change in temperature does not exceed the temperature range, newtemperature information is latched for comparison at step 610. In thisway, the change in temperature as measured by the temperature sensor maybe monitored by the calibration circuit until the change in temperatureexceeds the temperature range. If the change in temperature does exceedthe temperature range, a calibration operation is initiated by thecalibration circuit at step 640, The calibration operation 500 of FIG. 5may be used by the calibration operation at step 640 in someembodiments.

The temperature range against which the temperature change is evaluatedmay be programmable by programming information in a mode register insome embodiments. For example, programming first information to the moderegister may program a first temperature range to evaluate thetemperature change, whereas programming second information to the moderegister may program a second temperature range to evaluate thetemperature change.

FIG. 7 is a block diagram of an impedance ZQ calibration controller 700according to an embodiment of the disclosure. The ZQ calibrationcontroller 700 may be used for the ZQ calibration controller 330. The ZQcalibration controller 700 includes ZQ calibration control logic 710that receives the calibration signal ZQ_COM. As previously described,the calibration signal ZQCOM is used to activate the calibration circuitto perform calibration operations. The ZQ calibration control logic 710provides the calibration activation signal ZQCAL to initiate acalibration operation. The calibration activation signal ZQCAL may beprovided, for example, to a ZQ arbitration engine to begin arbitrationfor control of an external resistance RZQ before performing thecalibration operation.

The ZQ calibration controller 700 may further include a temperaturecomparator 720. The temperature comparator 720 may receive temperatureinformation TEMP and may be compared by the temperature comparator 720to determine whether the ZQ calibration control logic 710 shouldinitiate a calibration operation by providing the calibration activationsignal ZQCAL. For example, the temperature information TEMP may belatched. and compared by the temperature comparator 720 to temperatureinformation for a previous temperature to determine whether a change intemperature exceeds a temperature range. Where the change in temperatureexceeds the temperature range, the ZQ calibration control logic 710provides a calibration activation signal ZQCAL to initiate a calibrationoperation. In some embodiments, the temperature comparator 720 comparesthe temperature information TEMP to temperature limits, and when thetemperature limits are exceeded, the ZQ calibration control logic 710initiates a calibration operation.

The ZQ calibration controller 700 may include a timer 730. The timer 730receives an internal clock signal LCLK. The timer 730 may be used tocause the ZQ calibration control logic 710 to provide the calibrationactivation signal ZQCAL to initiate a calibration operation based ontime. The timer 730 may use the internal clock signal LCLK to time whento initiate calibration operations, For example, the timer 730 may beused to cause the ZQ calibration control logic 710 to periodicallyinitiate calibration operations. The timer 730 may measure a time periodaccording to the internal clock signal LCLK so that the ZQ calibrationcontrol logic 710 provides the calibration activation signal ZQCAL whenthe time period elapses.

The ZQ calibration controller 700 may also include a ZQ calibration flagcircuit 740. The ZQ calibration flag circuit 740 is configured toprogram information into a mode register (e.g., mode register 125 ofFIG. 1 ) to provide an indication related to the calibration operation.In the embodiment of FIG. 7 , the calibration information programmed inthe mode register is represented by calibration information ZQRDY. Thecalibration information may be represented by a single bit of dataprogrammed in the mode register. The ZQ calibration flag circuit 740 isconfigured to program the calibration information ZQRDY in the moderegister having a value that reflects an aspect of the calibrationoperation, For example, in some embodiments the value of the calibrationinformation ZQRDY programmed in the mode register represents whether thecalibration operation is completed. A “0” value may indicate that thecalibration operation has not completed and a “1” value may indicatethat the calibration operation has completed. In some embodiments thevalue of the calibration information ZQRDY represents whether any newcalibration parameters have been determined by a ZQ calibration engine.A “0” value indicates that a calibration operation did not result in newcalibration parameters, and a “1” value may indicate that there are newcalibration parameters,

The calibration information programmed in the mode register has beendescribed as a bit of data, that is, calibration information ZQRDYrepresented by one bit of data. However, in some embodiments, additionalbits may be included as part of the information programmed in the moderegister. For example, two or more bits may be programmed in the moderegister, with each bit providing indication of different aspects of thecalibration operation.

The mode register may be read by a mode register read command receivedby the semiconductor device 10, The calibration information ZQRDY willbe provided in response to the mode register read, thereby providing theindication of the calibration operation. The mode register read commandmay be used by a memory controller to query the semiconductor device 10regarding the status of a calibration operation. In response to the moderegister read command, information programmed in the mode register,including the calibration information ZQRDY, is provided by thesemiconductor device 10 to the memory controller. Upon determining thatthe calibration information ZQRDY is set (e.g., to indicate that thecalibration operation is complete, to indicate new calibrationparameters, etc.), the memory controller may provide a ZQ latch commandto the semiconductor device to apply the calibration parameters to setimpedances of the programmable termination components in someembodiments. The semiconductor device 10 applies the calibrationparameters to set the impedances in response to the ZQ latch command. Insome embodiments, the calibration parameters may be applied to set theimpedances without receiving a command, for example, the calibrationparameters are automatically applied by the semiconductor devicefollowing completion of the calibration operations.

The ZQ calibration controller 700 is illustrated in FIG. 7 as includingthe ZQ calibration control logic 710, the temperature comparator 720,timer 730, and ZQ calibration flag circuit 740. However, the embodimentillustrated in FIG. 7 is not intended to limit the configuration of theZQ calibration controller 700. In other embodiments of the invention,one or more of the ZQ calibration control logic 710, the temperaturecomparator 720, timer 730, and ZQ calibration flag circuit 740 may belocated elsewhere in the semiconductor device and/or implemented usingother circuits included in the semiconductor device.

FIG. 8 is a block diagram of an impedance ZQ calibration engine 800according to an embodiment of the disclosure. The ZQ calibration engine800 includes calibration engine control logic 822 that receives acalibration start signal ZQCALSTART to activate the ZQ calibrationengine 800 to perform calibration operations. A comparator 824 includedin the ZQ calibration engine 800 is coupled to the calibration terminalZQ 27 and is further provided the reference voltage ZQVREF. Thecomparator 824 compares the voltage at the calibration terminal ZQ 27with the reference voltage ZQVREF, The reference voltage ZQVREF may bebased on another voltage. For example, in some embodiments, thereference voltage ZQVREF may be based on an externally provided dataoutput voltage VDDQ. In some embodiments, the reference voltage ZQVREFmay be based on an internal voltage. For example, the reference voltageZQVREF may be based on Vdd2H, which as previously described, may be aconstant voltage and does not vary based on variations in an externallyprovided voltage, for example, the externally provided data outputvoltage VDDQ. Vdd2H may be 1.05 volts in some embodiments. In someembodiments, however, Vdd2H may be 1.1 volts. The reference voltageZQVREF may be a fraction of Vdd2H. In some embodiments, the referencevoltage ZQVREF may be one-fourth of Vdd2H. In some embodiments, thereference voltage ZQVREF may be one-half of Vdd2H. The specific examplesfor the reference voltage ZQVREF described are not intended to limit thereference voltage ZQVREF to those examples. Other values for thereference voltage ZQVREF may be used as well.

The comparator 824 provides a signal to a calibration parameter circuit826. The calibration parameter circuit 826 determines calibrationparameters that are used to adjust the impedance of programmabletermination components. The calibration parameter circuit 826 determinesthe calibration parameters by changing the calibration parameters untilcomparator 824 indicates that the voltage at the calibration terminal ZQ27 is equal to the reference voltage ZQVREF. When the comparator 824indicates the voltages are equal, the calibration parameters areprovided to a calibration parameter latch 828. The calibration parameterlatch 828 latches the calibration parameters, and the calibrationparameters are applied to set impedances of programmable terminationcomponents in response to the ZQ latch signal ZQLAT.

The ZQ calibration engine 800 further includes a calibration parameterstorage circuit 830. The calibration parameter storage circuit 830 isconfigured to store calibration parameters. Calibration parameters forvarious operating conditions may be stored by the calibration storagecircuit 830. For example, calibration parameters for multiple frequencyset points may be stored after the calibration parameters are determinedby the calibration parameter circuit 826. The calibration parameters maybe kept current by background calibration operations. The currentcalibration parameters may be stored to update previous calibrationparameters. Storing calibration parameters in the calibration storagecircuit 830 may avoid performing a calibration operation when changingoperating conditions, for example, changing frequency set points.

FIG. 9 is a block diagram of programmable termination components 900according to an embodiment of the disclosure. The programmabletermination components 900 may be used setting pull-up and pull-downimpedances for the programmable termination components 30 of the I/Ocircuits 17. In some embodiments, the programmable terminationcomponents 900 is a replica of programmable termination components thatare used for on-die termination and output buffer impedance. In suchembodiments where the programmable termination components 900 is areplica, the programmable termination components 900 are used todetermine an impedance code ZQCODE, which is then used to set theimpedances of the actual programmable termination components used foron-die termination and output buffer impedance.

The programmable termination components 900 include adjustable pull-uptermination components 910 and adjustable pull-down terminationcomponents 920. The adjustable pull-up termination components 910 andadjustable pull-down termination components 920 are coupled to a node930. The node 930 may be coupled to the calibration terminal 27 throughswitch 940. A pull-up impedance of the pull-up termination components910 may be adjusted according to pull-up calibration parameters ZQPUPand a pull-down impedance of the pull-down termination components 920may be adjusted according to pull-down calibration parameters ZQPDN. Thepull-up and pull-down calibration parameters ZQPUP and ZQPDN may beincluded in the calibration parameters ZQCODE provided by the ZQcalibration engine 320.

In sonic embodiments, the adjustable pull-up termination components 910may include a plurality of similar pull-up termination circuits coupledin parallel between the node 930 and a power supply. Each of the pull-uptermination circuits includes a resistor and P-channel devices coupledin parallel with the resistor to reduce the impedance of the pull-uptermination circuit to tune the impedance of the resistor. The pull-upcalibration code ZQPUP may be provided to the control terminals of theP-channel devices to adjust the impedance of the pull-up terminationcircuits. The adjustable pull-down termination components 920 is similarto the adjustable pull-up termination components 910. Each of thepull-down termination circuits of the adjustable pull-down terminationcomponents 920 includes multiple N-channel devices coupled in parallelwith a resistor, and the impedance of the pull-down termination circuitsare adjustable by the pull-down calibration parameters ZQPDN. Otherconfigurations of adjustable pull-up and pull-down terminationcomponents may be used in other embodiments of the disclosure, and theexample provided is not intended to limit the scope of the disclosure toany particular configuration of adjustable pull-up and pull-downtermination components

The pull-up termination components 910 may be coupled to a power supply(e.g., Vdd2H) through a switch 915. The switch 915 may be used toactivate the pull-up termination components 910. The pull-downtermination components 920 may be coupled to ground through a switch925. The switch 925 may be used to activate the pull-down terminationcomponents 920. The switches 915 and 925 may be controlled by thecalibration engine control logic 822 during calibration operations,

A calibration operation according to an embodiment of the disclosurewill described below. The calibration operation maybe performed by theZQ calibration circuit. The calibration operation will be described withreference to FIGS. 1-9 . It will be appreciated that the followingcalibration operation is provided by way of example and is not intendedto limit the disclosure to the specific calibration operation described.The ZQ calibration engine control logic 822 is activated by thecalibration start signal ZQCALSTART to perform the calibrationoperation. The calibration operation may include determining calibrationparameters to set a pull-down impedance of the programmable terminationcomponents and also determining calibration parameters to set a pull-upimpedance of the programmable termination components.

When the calibration engine control logic 822 is activated by thecalibration start signal ZQCALSTART, the comparator 824 compares avoltage at the calibration terminal ZQ 27 with the reference voltageZQVREF to determine the calibration parameters to set a pull-downimpedance. The voltage at the calibration terminal ZQ 27 is based on animpedance of programmable termination components set by currentcalibration parameters and the external resistance RZQ. As previouslydescribed, the calibration terminal ZQ 27 is coupled to an externalresistance RZQ. The external resistance RZQ forms a voltage dividercircuit with the pull-down impedance of the programmable terminationcomponents, and thus, the voltage of the calibration terminal ZQ 27 is afraction of the Vdd2H voltage based on the ratio of the impedances ofthe external resistance RZQ and the pull-down impedance of theprogrammable termination components. As the pull-down impedance of theprogrammable termination components increases, the voltage of thecalibration terminal ZQ 27 increases. Conversely, as the pull-downimpedance of the programmable termination components decreases thevoltage of the calibration terminal ZQ 27 decreases.

The pull-down impedance of the programmable termination components isadjusted by the calibration parameter circuit 826 by changing thecalibration parameters setting the pull-down impedance until thecomparator 824 indicates that the voltage of the calibration terminal ZQ27 is equal to the reference voltage ZQVREF, When the voltage of thecalibration terminal ZQ 27 is equal to the reference voltage ZQVREF, thepull-down impedance of the programmable termination components has beenset to the correct pull-down impedance. The calibration parametersprovided by the calibration parameter circuit 826 that set the correctimpedance or the pull-down impedance of the programmable terminationcomponents are latched by the calibration parameter latch 828.

With the correct pull-down impedance of the adjustable pull-downtermination components set, the calibration parameters to set thepull-up impedance of the adjustable pull-up termination components maybe determined. Instead of the external resistance RZQ being used for thecalibration, the calibration terminal ZQ 27 is coupled through theadjustable pull-down termination components to ground (set with thecorrect pull-down impedance) and further coupled through the adjustablepull-up termination components to the power supply providing the voltageVdd2H.

The pull-up impedance of the adjustable pull-up termination componentsis adjusted by the calibration parameter circuit 826 by changing thecalibration parameters setting the pull-up impedance until thecomparator 824 provides a signal to the calibration parameter circuit826 that indicates the voltage of the calibration terminal ZQ 27 isequal to the reference voltage ZQVREF. When the voltage of a shared nodebetween the pull-up and pull-down termination components (e.g., node 930of FIG. 9 ) is equal to the reference voltage ZQVREF, the pull-upimpedance of the adjustable pull-up termination components has been setto the correct pull-up impedance. The calibration parameters provided bythe calibration parameter circuit 826 that set the correct pull-upimpedance of the adjustable pull-up termination components are latchedby the calibration parameter latch 828.

Following the calibration operation, the calibration parameters for thepull-down and pull-up impedances have been determined and thecalibration parameters for setting the pull-down and pull-up impedancesare applied in response to the ZQ latch signal ZQLAT.

As previously described, the reference voltage ZQVREF may be based on aninternal voltage, for example, Vdd2H, or an external voltage, such asVDDQ. The internal voltage Vdd2H may be a constant voltage that does notvary based on variations in the externally provided data output voltageVDDQ. Thus, a calibration operation may not need to be performed if thedata output voltage VDDQ is changed, for example, when changing afrequency set point for operation.

In some embodiments, calibration operations for determining thecalibration parameters for the pull-up impedance for the programmabletermination components may be command based. For example, a command maybe received by the semiconductor device for performing calibrationoperations for the pull-up impedance of the programmable terminationcomponents, without performing calibration operations for the pull-downimpedance. Calibration operations for the pull-impedance do not requirethe use of the external resistance RZQ, and consequently, arbitration toobtain control over the external resistance RZQ is not necessary. Inthis manner, the pull-up impedance of the programmable terminationcomponents may be updated when changing a frequency set point foroperation, which may involve changing the data output voltage VDDQ.Changing the data output voltage VDDQ may involve changing the pull-upimpedance without changing the pull-down impedance.

FIG. 10 is a timing diagram of a Voh calibration according to anembodiment of the disclosure. Voh represents the voltage of a logicalhigh value for output data signals. The timing diagram of FIG. 10illustrates various signals for changing a frequency set pointassociated with changing to a higher data output voltage VDDQ. FIG. 10illustrates a true clock signal CK_t and a complementary clock signalCK_c, along with command-address signals CA and the command representedby the command-address signals CA. FIG. 10 further illustrates the dataoutput voltage VDDQ, true and complementary data strobe signals DQS_tand DQS_c, and the data signals DQ[15:0]. In the embodiment of FIG. 10 ,the data signals DQ[15:0] include 16 signals. However, the data signalsfor other embodiments may include greater or fewer signals.

Over times T0 and T1, a write command is received by the semiconductordevice 10, Write data is received as data signals DQS[15:0] by thesemiconductor device 10 between times T2 and Tb0 in response to the datastrobe signals DQS_t and DQS_c. Between times T2 and Tb0, thesemiconductor device is deselected, as indicated by DES for therepresentation of the command. A data strobe to data time tDQS2DQ isillustrated, as is a write strobe pause time tWPST.

At around time T1, the data output voltage VDDQ begins to increase froma first voltage (e.g., 0.3 volts). Although the data output voltage VDDQbegins to change the write operation of the earlier write command maycontinue. A change in data output voltage VDDQ indicates that afrequency set point for the semiconductor device will be changed.Typically, the data output voltage VDDQ increases for a change to ahigher frequency set point, and conversely, the data output voltage VDDQdecreases for a change to a lower frequency set point. By time Tb0 thedata output voltage VDDQ has reached a second voltage (e.g., 0.5 volts)that is greater than the first voltage. A calibration command isreceived at time Tb0 to perform a calibration operation, as representedby the MPC train/cal command. A calibration operation may be needed dueto the change in data output voltage VDDQ from the first voltage to thehigher second voltage. A ZQ calibration time tZQCAL is measured relativeto the calibration command. During the ZQ calibration time tZQCAL thecalibration process is performed.

Another write command is received by the semiconductor device over timesTc0 and Tc1, with write data received between times Td1 and Te1responsive to the data strobe signals DQS_t and DQS_c. A write datapreamble time tWPRE and data strobe setup time tDQSS are alsoillustrated. As illustrated by FIG. 10 , a memory operation, forexample, a write operation, may be performed during the ZQ calibrationtime tZQCAL.

Over times Te2 and Te3, mode register write commands are received tocause the frequency set point to change following the end of the ZQcalibration time tZQCAL. In response, the frequency set point for thesemiconductor device changes over the frequency change time tFC, and thesemiconductor device may be operated according to the new frequency setpoint following time Tf0. During the frequency change time tFC, thereference voltage Vref may be updated for the new data output voltageVDDQ. In some embodiments, a calibration latch command is needed to bereceived by the semiconductor device to apply any new calibrationparameters to adjust the impedances of the programmable terminationcomponents in the input/output circuits 17. In other embodiments, anychanges to the calibration parameters are applied without receiving acalibration latch command, for example, responsive to frequency setpoint change, which eliminates the need for the semiconductor device toreceive a calibration latch command to apply the calibration parameters.

FIG. 11 is a timing diagram of a Voh calibration according to anembodiment of the disclosure. The timing diagram of FIG. 11 illustratesvarious signals for changing a frequency set point associated withchanging to a lower data output voltage VDDQ. FIG. 11 illustrates a trueclock signal CK_t and a complementary clock signal CK_c, along withcommand-address signals CA and the command represented by thecommand-address signals CA. FIG. 11 further illustrates the data outputvoltage VDDQ, true and complementary data strobe signals DQS_t andDQS_c, and the data signals DQ[15:0]. In the embodiment of FIG. 11 , thedata signals DQ[15:0] include 16 signals. However, the data signals forother embodiments may include greater or fewer signals.

Over times T0 and T1, a write command is received by the semiconductordevice 10. Write data is received as data signals DQS[15:0] by thesemiconductor device 10 between times T2 and Tb0 in response to the datastrobe signals DQS_t and DQS_c. Between times T2 and Tb0, thesemiconductor device is deselected, as indicated by DES for therepresentation of the command. A data strobe to data time tDQS2DQ isillustrated, as is a write strobe pause time tWPST.

Over times Tb0 and Tb1, mode register write commands are received tocause the frequency set point to change. In response, the frequency setpoint for the semiconductor device changes over the frequency changetime tFC, During the frequency change time tFC, the reference voltageVref may be updated for the new data output voltage VDDQ. Thesemiconductor device may be operated according to the new frequency setpoint following time Tc0.

At around time Tc0, the data output voltage VDDQ begins to decrease fromthe first voltage. As previously discussed, a change in data outputvoltage VDDQ indicates that a frequency set point for the semiconductordevice will be changed. Decreasing the data output voltage VDDQtypically signals a change to a lower frequency set point. By time Td0the data output voltage VDDQ has reached the lower second voltage.

A calibration command is received at time Td1 to perform a calibrationoperation, as represented by the MPC train/cal command. A calibrationoperation may be needed due to the change in data output voltage VDDQfrom a first voltage (e.g., 0.5 volts) to a lower voltage (e.g., 0.3volts). A ZQ calibration time tZQCAL is measured relative to thecalibration command During the ZQ calibration time tZQCAL thecalibration process is performed.

At time Tc1 a ZQ calibration latch command is received by thesemiconductor device to apply any new calibration parameters to adjustthe impedances of the programmable termination components in theinput/output circuits 17. In other embodiments, any changes to thecalibration parameters are applied responsive to frequency set pointchange, which eliminates the need for the semiconductor device toreceive a calibration latch command to apply the calibration parameters.

From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. Accordingly, the invention is notlimited except as by the appended claims.

What is claimed is:
 1. A method comprising: initiating a calibrationoperation of a memory when a change in temperature exceeds a temperaturerange; arbitrating with one or more other memories for use of anexternal resistance, with an arbitration engine of the memory; obtainingcontrol of the external resistance; and performing the calibrationoperation after control of the external resistance is obtained.
 2. Themethod of claim 1, further comprising: determining the change intemperature based, at least in part, by comparing a previous temperatureto a current temperature; and determining whether the change intemperature exceeds a temperature range.
 3. The method of claim 1,further comprising latching temperature information indicative of acurrent temperature.
 4. The method of claim 3, wherein the temperatureinformation comprises digital data.
 5. The method of claim 3, whereinthe temperature information comprises a voltage.
 6. The method of claim5 further comprising converting the voltage to a digital value.
 7. Amethod comprising: initiating a calibration operation of a memory when atemperature exceeds or falls below a temperature limit; arbitrating withone or more other memories for use of an external resistance, with anarbitration engine of the memory; obtaining control of the externalresistance; and performing the calibration operation after control ofthe external resistance is obtained.
 8. The method of claim 7, furthercomprising measuring the temperature with a temperature sensor.
 9. Themethod of claim 8, wherein measuring the temperature comprises measuringthe temperature of a semiconductor device including the memory.
 10. Themethod of claim 7, further comprising comparing the temperature to thetemperature limit.
 11. The method of claim 7, further comprisinginitiating a second calibration operation of the memory when a timeperiod elapses.
 12. The method of claim 7, further comprisingprogramming the temperature limit in a mode register.
 13. The method ofclaim 7, Wherein calibration operation comprises: performing ZQcalibration to determine calibration results for output driverimpedance; and setting a value in a mode register at completion of theZQ calibration to indicate if a new calibration result has beendetermined.
 14. An apparatus, comprising: a memory including: atemperature sensor configured to provide temperature informationindicative of a temperature; and an impedance calibration circuitconfigured to perform a calibration operation to arbitrate with anothermemory for use of an external resistance and determine calibrationparameters based on the temperature information provided by thetemperature sensor.
 15. The apparatus of claim 14, wherein the impedancecalibration circuit comprises: an impedance calibration engineconfigured to perform the calibration operation responsive to beingactivated and determine the calibration parameters; and an impedancecalibration controller configured to initiate the calibration operation,the impedance calibration controller comprising: impedance calibrationcontrol logic configured to provide a calibration activation signal toactivate the impedance calibration engine; and a temperature comparatorconfigured to receive the temperature information and cause theimpedance calibration control logic to activate the impedancecalibration engine.
 16. The apparatus of claim 15, wherein the impedancecalibration controller further comprises a timer configured to cause theimpedance calibration control logic to activate the impedancecalibration engine responsive to a time period elapsing.
 17. Theapparatus of claim 14, further comprising a calibration flag circuitconfigured to program calibration information into a mode register. 18.The apparatus of 17, wherein the calibration information indicateswhether the calibration information is completed.
 19. The apparatus ofclaim 14, the impedance calibration circuit further comprises anarbitration engine configured to arbitrate with the other memory for theuse of the external resistance.
 20. The apparatus of claim 14, whereinthe impedance calibration circuit is configured to perform thecalibration operation based on the temperature information responsive toa change in the temperature exceeding a temperature range.
 21. Theapparatus of claim 14, wherein the impedance calibration circuit isconfigured to perform the calibration operation based on the temperatureinformation responsive to the temperature exceeding or falling below atemperature limit.